Stacking fault formation and Ag precipitation in Cu-Ag-Sc alloys

We studied nucleation and growth of Ag precipitates in a Cu-6 wt%Ag-0.15 wt%Sc alloy found that the early was similar to continuous precipitation it occurred only on dislocations within Cu grains, not any grain boundaries. In aged samples, we observed stacking faults extended into nanotwins. These planar defects formed during surrounding matrix. The formation released misfit strain Cu/Ag interfaces, enhancing subsequent precipitates. Unlike intrinsic previous research, these were clearly extrinsic. provided row additional sites aligned along twin boundaries for new precipitates, by reducing dissolved matrix, increased conductivity significantly. Planar reduced electrical somewhat, but synergy between combined with had effect substantially increasing both hardness conductivity.